TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. Power Transistor (NPN) 2N3055 Dimensions in mm TO-3 *Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Small Signal Current Gain Cut-off Frequency Second Breakdown Collector Current with Base Forward Biased Power Transistor (NPN) 2N3055 Electrical Characteristics (T Ambient=25✬ unless noted otherwise) Symbol Operating Junction and Storage Temperature Range Low collector-emitter saturation voltage. Maximum Ratings (T Ambient=25✬ unless noted otherwise) Symbol The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Solderable per MIL-STD-202, Method 208 20 grams (approx) General Purpose Switching and Amplifier Applications.Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W.Power Transistor (NPN) 2N3055 Power Transistor (NPN) Features General-purpose switching and amplifier application. NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES Trans GP BJT NPN 60V 15A 3-Pin(2+Tab) TO-3 Sleeve 60V Vceo, 15.000A Ic, 5 hFEġ5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTSġ5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiersġ15.000W Power NPN Metal Can Transistor.
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